BDX33CG

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Mfr.Part #
BDX33CG
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 100V 10A TO220
Stock
1,328
In Stock :
1,328

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
3
Number of Elements :
1
Weight :
6.000006g
Transistor Application :
SWITCHING
Pbfree Code :
yes
Length :
10.53mm
REACH SVHC :
No SVHC
Current - Collector Cutoff (Max) :
500μA
hFE Min :
750
Number of Pins :
3
Packaging :
Tube
Max Power Dissipation :
70W
Case Connection :
COLLECTOR
Width :
4.83mm
Contact Plating :
Tin
Power Dissipation :
70W
Lead Free :
Lead Free
Operating Temperature :
-65°C~150°C TJ
Continuous Collector Current :
4A
Mounting Type :
Through Hole
Transistor Type :
NPN - Darlington
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Collector Base Voltage (VCBO) :
100V
Transition Frequency :
3MHz
Peak Reflow Temperature (Cel) :
260
Base Part Number :
BDX33
Factory Lead Time :
5 Weeks
JESD-609 Code :
e3
JEDEC-95 Code :
TO-220AB
Collector Emitter Saturation Voltage :
2.5V
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 6mA, 3A
Surface Mount :
No
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Height :
15.75mm
Emitter Base Voltage (VEBO) :
5V
Package / Case :
TO-220-3
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Published :
2006
Time@Peak Reflow Temperature-Max (s) :
40
Polarity :
NPN
ECCN Code :
EAR99
Voltage - Rated DC :
100V
Current Rating :
10A
Max Collector Current :
10A
Collector Emitter Breakdown Voltage :
100V
Collector Emitter Voltage (VCEO) :
100V
Radiation Hardening :
No
Number of Terminations :
3
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Datasheets
BDX33CG
Introducing Transistors - Bipolar (BJT) - Single onsemi BDX33CG from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Base Part Number:BDX33, Package / Case:TO-220-3, Number of Terminations:3, BDX33CG pinout, BDX33CG datasheet PDF, BDX33CG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDX33CG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDX33CG


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDX33CG Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 3A 3V.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 6mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 10A volts at its maximum.

BDX33CG Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz


BDX33CG Applications


There are a lot of ON Semiconductor
BDX33CG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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