BDX33CG
- Mfr.Part #
- BDX33CG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 10A TO220
- Stock
- 1,328
- In Stock :
- 1,328
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Number of Elements :
- 1
- Weight :
- 6.000006g
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Length :
- 10.53mm
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 500μA
- hFE Min :
- 750
- Number of Pins :
- 3
- Packaging :
- Tube
- Max Power Dissipation :
- 70W
- Case Connection :
- COLLECTOR
- Width :
- 4.83mm
- Contact Plating :
- Tin
- Power Dissipation :
- 70W
- Lead Free :
- Lead Free
- Operating Temperature :
- -65°C~150°C TJ
- Continuous Collector Current :
- 4A
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN - Darlington
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 100V
- Transition Frequency :
- 3MHz
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- BDX33
- Factory Lead Time :
- 5 Weeks
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Saturation Voltage :
- 2.5V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 6mA, 3A
- Surface Mount :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Height :
- 15.75mm
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-220-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity :
- NPN
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 100V
- Current Rating :
- 10A
- Max Collector Current :
- 10A
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Radiation Hardening :
- No
- Number of Terminations :
- 3
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Datasheets
- BDX33CG

NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX33CG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 750 @ 3A 3V.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 6mA, 3A.In order to achieve high efficiency, the continuous collector voltage should be kept at 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 10A.A transition frequency of 3MHz is present in the part.Collector current can be as low as 10A volts at its maximum.
BDX33CG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz
BDX33CG Applications
There are a lot of ON Semiconductor
BDX33CG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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