BDX33B-S
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- Mfr.Part #
- BDX33B-S
- Manufacturer
- Bourns, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 10A TO220
- Stock
- 14,828
- In Stock ：
- 14,828
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- Manufacturer :
- Bourns, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 2W
- Collector Base Voltage (VCBO) :
- 80V
- Pin Count :
- 3
- ECCN Code :
- EAR99
- JESD-609 Code :
- e1
- Package / Case :
- TO-220-3
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 80V
- Max Power Dissipation :
- 2W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Transistor Element Material :
- SILICON
- Base Part Number :
- BDX33
- Polarity :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 1993
- Transistor Type :
- NPN - Darlington
- Terminal Finish :
- TIN SILVER COPPER
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 10mA
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Operating Temperature :
- -65°C~150°C TJ
- JESD-30 Code :
- R-PSFM-T3
- Element Configuration :
- Single
- Number of Elements :
- 1
- Max Collector Current :
- 10A
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 6mA, 3A
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Breakdown Voltage :
- 80V
- Datasheets
- BDX33B-S
NPN - Darlington -65°C~150°C TJ 10mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX33B-S Overview
This device has a DC current gain of 750 @ 3A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.A VCE saturation (Max) of 2.5V @ 6mA, 3A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.A maximum collector current of 10A volts is possible.
BDX33B-S Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
BDX33B-S Applications
There are a lot of Bourns Inc.
BDX33B-S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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