BDX33BG

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Mfr.Part #
BDX33BG
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 10A TO220
Stock
6
In Stock :
6

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mount :
Through Hole
Current Rating :
10A
Lifecycle Status :
ACTIVE (Last Updated: 5 hours ago)
Radiation Hardening :
No
Mounting Type :
Through Hole
Collector Emitter Voltage (VCEO) :
80V
Number of Terminations :
3
Operating Temperature :
-65°C~150°C TJ
JEDEC-95 Code :
TO-220AB
REACH SVHC :
No SVHC
Time@Peak Reflow Temperature-Max (s) :
40
Published :
2011
Collector Emitter Saturation Voltage :
2.5V
Current - Collector Cutoff (Max) :
500μA
Number of Elements :
1
Packaging :
Tube
Max Power Dissipation :
70W
Collector Base Voltage (VCBO) :
80V
Transition Frequency :
3MHz
Voltage - Rated DC :
80V
Element Configuration :
Single
JESD-609 Code :
e3
Max Collector Current :
10A
Package / Case :
TO-220-3
ECCN Code :
EAR99
Factory Lead Time :
2 Weeks
Contact Plating :
Tin
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 6mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Polarity :
NPN
Transistor Type :
NPN - Darlington
Transistor Element Material :
SILICON
Emitter Base Voltage (VEBO) :
5V
RoHS Status :
ROHS3 Compliant
Power Dissipation :
70W
Peak Reflow Temperature (Cel) :
260
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Collector Emitter Breakdown Voltage :
80V
Base Part Number :
BDX33
hFE Min :
750
Pbfree Code :
yes
Number of Pins :
3
Case Connection :
COLLECTOR
Transistor Application :
SWITCHING
Lead Free :
Lead Free
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
BDX33BG
Introducing Transistors - Bipolar (BJT) - Single onsemi BDX33BG from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-220-3, Base Part Number:BDX33, Number of Pins:3, BDX33BG pinout, BDX33BG datasheet PDF, BDX33BG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDX33BG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDX33BG


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDX33BG Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 6mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 3MHz.A maximum collector current of 10A volts can be achieved.

BDX33BG Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz


BDX33BG Applications


There are a lot of ON Semiconductor
BDX33BG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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