BDX33BG
- Mfr.Part #
- BDX33BG
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 10A TO220
- Stock
- 6
- In Stock :
- 6
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Through Hole
- Current Rating :
- 10A
- Lifecycle Status :
- ACTIVE (Last Updated: 5 hours ago)
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 80V
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- JEDEC-95 Code :
- TO-220AB
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2011
- Collector Emitter Saturation Voltage :
- 2.5V
- Current - Collector Cutoff (Max) :
- 500μA
- Number of Elements :
- 1
- Packaging :
- Tube
- Max Power Dissipation :
- 70W
- Collector Base Voltage (VCBO) :
- 80V
- Transition Frequency :
- 3MHz
- Voltage - Rated DC :
- 80V
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Max Collector Current :
- 10A
- Package / Case :
- TO-220-3
- ECCN Code :
- EAR99
- Factory Lead Time :
- 2 Weeks
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 6mA, 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Polarity :
- NPN
- Transistor Type :
- NPN - Darlington
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 70W
- Peak Reflow Temperature (Cel) :
- 260
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Collector Emitter Breakdown Voltage :
- 80V
- Base Part Number :
- BDX33
- hFE Min :
- 750
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BDX33BG

NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX33BG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 6mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 3MHz.A maximum collector current of 10A volts can be achieved.
BDX33BG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz
BDX33BG Applications
There are a lot of ON Semiconductor
BDX33BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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