BDX33B

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Mfr.Part #
BDX33B
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 10A TO220
Stock
17,173
In Stock :
17,173

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
-65°C~150°C TJ
Lead Free :
Lead Free
Factory Lead Time :
2 Weeks
Base Part Number :
BDX33
Collector Emitter Saturation Voltage :
2.5V
Transition Frequency :
3MHz
Power Dissipation :
70W
Case Connection :
COLLECTOR
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Lifecycle Status :
ACTIVE (Last Updated: 5 hours ago)
Pin Count :
3
Polarity :
NPN
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 6mA, 3A
Peak Reflow Temperature (Cel) :
260
Contact Plating :
Tin
Max Collector Current :
10A
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
REACH SVHC :
No SVHC
Current Rating :
10A
Mounting Type :
Through Hole
hFE Min :
750
Emitter Base Voltage (VEBO) :
5V
Transistor Type :
NPN - Darlington
Number of Elements :
1
Number of Terminations :
3
Pbfree Code :
yes
Collector Base Voltage (VCBO) :
80V
Packaging :
Tube
RoHS Status :
ROHS3 Compliant
Radiation Hardening :
No
Package / Case :
TO-220-3
JEDEC-95 Code :
TO-220AB
Published :
2011
Collector Emitter Breakdown Voltage :
80V
Mount :
Through Hole
Number of Pins :
3
JESD-609 Code :
e3
Current - Collector Cutoff (Max) :
500μA
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
40
Collector Emitter Voltage (VCEO) :
80V
Max Power Dissipation :
70W
Voltage - Rated DC :
80V
Transistor Element Material :
SILICON
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
BDX33B
Introducing Transistors - Bipolar (BJT) - Single onsemi BDX33B from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Base Part Number:BDX33, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-220-3, Number of Pins:3, BDX33B pinout, BDX33B datasheet PDF, BDX33B amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDX33B ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDX33B


NPN - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDX33BG Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 6mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 10A.In the part, the transition frequency is 3MHz.A maximum collector current of 10A volts can be achieved.

BDX33BG Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 3MHz


BDX33BG Applications


There are a lot of ON Semiconductor
BDX33BG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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