BDX34B
- Mfr.Part #
- BDX34B
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 10A TO220
- Stock
- 6,699
- In Stock :
- 6,699
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Case Connection :
- COLLECTOR
- Mounting Type :
- Through Hole
- hFE Min :
- 750
- Pbfree Code :
- yes
- Current Rating :
- -10A
- Weight :
- 6.000006g
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Base Part Number :
- BDX34
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Height :
- 15.75mm
- Polarity :
- PNP
- Number of Elements :
- 1
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- -80V
- Published :
- 2000
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- No
- Length :
- 10.53mm
- Pin Count :
- 3
- Width :
- 4.83mm
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Transistor Type :
- PNP - Darlington
- Collector Emitter Saturation Voltage :
- 2.5V
- JEDEC-95 Code :
- TO-220AB
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 6mA, 3A
- Collector Base Voltage (VCBO) :
- 80V
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Max Power Dissipation :
- 70W
- Operating Temperature :
- -65°C~150°C TJ
- Factory Lead Time :
- 2 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 10A
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-220-3
- Number of Terminations :
- 3
- Power Dissipation :
- 70W
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 500μA
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 3MHz
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 80V
- Collector Emitter Breakdown Voltage :
- 80V
- Datasheets
- BDX34B

PNP - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
BDX34BG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 3A 3V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 10A volts.
BDX34BG Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 3MHz
BDX34BG Applications
There are a lot of ON Semiconductor
BDX34BG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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