BDX34B

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Mfr.Part #
BDX34B
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS PNP DARL 80V 10A TO220
Stock
6,699
In Stock :
6,699

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Case Connection :
COLLECTOR
Mounting Type :
Through Hole
hFE Min :
750
Pbfree Code :
yes
Current Rating :
-10A
Weight :
6.000006g
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Base Part Number :
BDX34
Additional Feature :
LEADFORM OPTIONS ARE AVAILABLE
Height :
15.75mm
Polarity :
PNP
Number of Elements :
1
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Voltage - Rated DC :
-80V
Published :
2000
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Peak Reflow Temperature (Cel) :
260
Surface Mount :
No
Length :
10.53mm
Pin Count :
3
Width :
4.83mm
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Lead Free :
Lead Free
Transistor Type :
PNP - Darlington
Collector Emitter Saturation Voltage :
2.5V
JEDEC-95 Code :
TO-220AB
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 6mA, 3A
Collector Base Voltage (VCBO) :
80V
REACH SVHC :
No SVHC
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Max Power Dissipation :
70W
Operating Temperature :
-65°C~150°C TJ
Factory Lead Time :
2 Weeks
Time@Peak Reflow Temperature-Max (s) :
40
Max Collector Current :
10A
Emitter Base Voltage (VEBO) :
5V
Package / Case :
TO-220-3
Number of Terminations :
3
Power Dissipation :
70W
Radiation Hardening :
No
Current - Collector Cutoff (Max) :
500μA
Number of Pins :
3
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Transition Frequency :
3MHz
Packaging :
Tube
Collector Emitter Voltage (VCEO) :
80V
Collector Emitter Breakdown Voltage :
80V
Datasheets
BDX34B
Introducing Transistors - Bipolar (BJT) - Single onsemi BDX34B from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:BDX34, Operating Temperature:-65°C~150°C TJ, Package / Case:TO-220-3, Number of Terminations:3, Number of Pins:3, BDX34B pinout, BDX34B datasheet PDF, BDX34B amp .Beyond Transistors - Bipolar (BJT) - Single onsemi BDX34B ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi BDX34B


PNP - Darlington -65°C~150°C TJ 500μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

BDX34BG Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 750 @ 3A 3V DC current gain.As it features a collector emitter saturation voltage of 2.5V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 3MHz in the part.When collector current reaches its maximum, it can reach 10A volts.

BDX34BG Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 6mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 3MHz


BDX34BG Applications


There are a lot of ON Semiconductor
BDX34BG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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