BDV65C-S

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Mounting Type :

Through Hole

Polarity :

NPN

Vce Saturation (Max) @ Ib, Ic :

2V @ 20mA, 5A

Emitter Base Voltage (VEBO) :

5V

Max Power Dissipation :

3.5W

Power - Max :

3.5W

Max Collector Current :

12A

RoHS Status :

ROHS3 Compliant

Transistor Type :

NPN - Darlington

Min Operating Temperature :

-65°C

Collector Emitter Breakdown Voltage :

120V

Base Part Number :

BDV65

Collector Base Voltage (VCBO) :

120V

Supplier Device Package :

SOT-93

Mount :

Through Hole

Voltage - Collector Emitter Breakdown (Max) :

120V

Current - Collector Cutoff (Max) :

2mA

Current - Collector (Ic) (Max) :

12A

Published :

1993

Packaging :

Tube

Package / Case :

TO-218-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 5A 4V

Element Configuration :

Single

Number of Elements :

1

Number of Pins :

3

Max Operating Temperature :

150°C

Collector Emitter Voltage (VCEO) :

120V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Saturation Voltage :

2V