BDV65B-S

Manufacturer :

Bourns, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Supplier Device Package :

SOT-93

Max Collector Current :

12A

Width :

4.9mm

Collector Emitter Saturation Voltage :

2V

Vce Saturation (Max) @ Ib, Ic :

2V @ 20mA, 5A

Number of Elements :

1

Max Operating Temperature :

150°C

Packaging :

Tube

Voltage - Collector Emitter Breakdown (Max) :

100V

Published :

1993

Min Operating Temperature :

-65°C

Current - Collector (Ic) (Max) :

12A

RoHS Status :

ROHS3 Compliant

Base Part Number :

BDV65

Mounting Type :

Through Hole

Max Power Dissipation :

3.5W

Collector Base Voltage (VCBO) :

100V

Collector Emitter Voltage (VCEO) :

100V

Transistor Type :

NPN - Darlington

Height :

12.2mm

Current - Collector Cutoff (Max) :

2mA

Mount :

Through Hole

Element Configuration :

Single

Power - Max :

3.5W

Polarity :

NPN

Collector Emitter Breakdown Voltage :

100V

hFE Min :

1000

Package / Case :

TO-218-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 5A 4V

Number of Pins :

3

Operating Temperature :

-65°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

15.2mm

Emitter Base Voltage (VEBO) :

5V