BCW72LT1G
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- Mfr.Part #
- BCW72LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.1A SOT23-3
- Stock
- 13,786
- In Stock ：
- 13,786
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2006
- Factory Lead Time :
- 4 Weeks
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 50V
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Length :
- 2.9mm
- Voltage - Rated DC :
- 45V
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- hFE Min :
- 200
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 500µA, 10mA
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Height :
- 940μm
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 210mV
- JESD-609 Code :
- e3
- Width :
- 1.3mm
- Radiation Hardening :
- No
- Transition Frequency :
- 300MHz
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Frequency :
- 300MHz
- Current Rating :
- 100mA
- Max Breakdown Voltage :
- 45V
- Pin Count :
- 3
- Terminal Position :
- Dual
- Surface Mount :
- yes
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Max Collector Current :
- 100mA
- Power Dissipation :
- 300mW
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 300mW
- Collector Emitter Voltage (VCEO) :
- 45V
- Gain Bandwidth Product :
- 300MHz
- Number of Elements :
- 1
- Base Part Number :
- BCW72
- Collector Emitter Breakdown Voltage :
- 45V
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- BCW72LT1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW72LT1G Overview
DC current gain in this device equals 200 @ 2mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 210mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 500μA, 10mA.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 100mA current rating.As a result, the part has a transition frequency of 300MHz.Breakdown input voltage is 45V volts.In extreme cases, the collector current can be as low as 100mA volts.
BCW72LT1G Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 210mV
the vce saturation(Max) is 250mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 300MHz
BCW72LT1G Applications
There are a lot of ON Semiconductor
BCW72LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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