BCW70,235
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- Mfr.Part #
- BCW70,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANSISTOR PNP 45V 100MA SOT23
- Stock
- 34,983
- In Stock ：
- 34,983
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Mount :
- Surface Mount
- hFE Min :
- 215
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pin Count :
- 3
- Number of Terminations :
- 3
- Series :
- Automotive, AEC-Q101
- Frequency :
- 100MHz
- Max Collector Current :
- 100mA
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- BCW70
- Max Breakdown Voltage :
- 45V
- Factory Lead Time :
- 4 Weeks
- Collector Emitter Breakdown Voltage :
- 45V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- JESD-609 Code :
- e3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Published :
- 2009
- Transition Frequency :
- 100MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 250mW
- Polarity/Channel Type :
- PNP
- Contact Plating :
- Tin
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 2.5mA, 50mA
- Collector Emitter Voltage (VCEO) :
- 45V
- Collector Base Voltage (VCBO) :
- 50V
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 215 @ 2mA 5V
- Gain Bandwidth Product :
- 100MHz
- Terminal Form :
- Gull wing
- Datasheets
- BCW70,235
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW70,235 Overview
This device has a DC current gain of 215 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 150mV @ 2.5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BCW70,235 Features
the DC current gain for this device is 215 @ 2mA 5V
the vce saturation(Max) is 150mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW70,235 Applications
There are a lot of Nexperia USA Inc.
BCW70,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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