BCW70,235
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- Mfr.Part #
- BCW70,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANSISTOR PNP 45V 100MA SOT23
- Stock
- 34,983
- In Stock ：
- 34,983
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Series :
- Automotive, AEC-Q101
- JESD-609 Code :
- e3
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 45V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Base Voltage (VCBO) :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 45V
- Terminal Position :
- Dual
- Max Collector Current :
- 100mA
- Contact Plating :
- Tin
- Max Breakdown Voltage :
- 45V
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 215 @ 2mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 2.5mA, 50mA
- Pin Count :
- 3
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- PNP
- Frequency :
- 100MHz
- Published :
- 2009
- Transition Frequency :
- 100MHz
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Base Part Number :
- BCW70
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 250mW
- Number of Pins :
- 3
- hFE Min :
- 215
- Factory Lead Time :
- 4 Weeks
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Transistor Type :
- PNP
- Power Dissipation :
- 250mW
- Datasheets
- BCW70,235
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW70,235 Overview
This device has a DC current gain of 215 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 150mV @ 2.5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BCW70,235 Features
the DC current gain for this device is 215 @ 2mA 5V
the vce saturation(Max) is 150mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW70,235 Applications
There are a lot of Nexperia USA Inc.
BCW70,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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