BCW70,235
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- Mfr.Part #
- BCW70,235
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANSISTOR PNP 45V 100MA SOT23
- Stock
- 34,983
- In Stock ：
- 34,983
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Contact Plating :
- Tin
- Gain Bandwidth Product :
- 100MHz
- hFE Min :
- 215
- RoHS Status :
- ROHS3 Compliant
- Series :
- Automotive, AEC-Q101
- Number of Elements :
- 1
- Base Part Number :
- BCW70
- Terminal Position :
- Dual
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 45V
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Qualification Status :
- Not Qualified
- Terminal Form :
- Gull wing
- Transition Frequency :
- 100MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 250mW
- Emitter Base Voltage (VEBO) :
- 5V
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 215 @ 2mA 5V
- Transistor Application :
- SWITCHING
- Published :
- 2009
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Frequency :
- 100MHz
- Collector Emitter Breakdown Voltage :
- 45V
- Number of Terminations :
- 3
- Max Power Dissipation :
- 250mW
- Max Breakdown Voltage :
- 45V
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 2.5mA, 50mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 100mA
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- BCW70,235
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW70,235 Overview
This device has a DC current gain of 215 @ 2mA 5V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 150mV @ 2.5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BCW70,235 Features
the DC current gain for this device is 215 @ 2mA 5V
the vce saturation(Max) is 150mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW70,235 Applications
There are a lot of Nexperia USA Inc.
BCW70,235 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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