BCW70LT1G
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- Mfr.Part #
- BCW70LT1G
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 5,322
- In Stock ：
- 5,322
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Width :
- 1.3mm
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 225mW
- hFE Min :
- 215
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Published :
- 2006
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Contact Plating :
- Tin
- Voltage - Rated DC :
- -45V
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- -100mA
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- BCW70
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Power Dissipation :
- 300mW
- Factory Lead Time :
- 2 Weeks
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Max Collector Current :
- 100mA
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- -300mV
- Max Breakdown Voltage :
- 45V
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 215 @ 2mA 5V
- Terminal Position :
- Dual
- Length :
- 2.9mm
- Pbfree Code :
- yes
- Power - Max :
- 225mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 940μm
- Transistor Type :
- PNP
- Datasheets
- BCW70LT1G
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW70LT1G Overview
This device has a DC current gain of 215 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 500μA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BCW70LT1G Features
the DC current gain for this device is 215 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
BCW70LT1G Applications
There are a lot of ON Semiconductor
BCW70LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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