BCW70,215
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- Mfr.Part #
- BCW70,215
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANSISTOR PNP 45V 100MA SOT23
- Stock
- 1,276
- In Stock ：
- 1,276
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Unclassified
- Weight :
- 4.535924g
- Factory Lead Time :
- 4 Weeks
- Transition Frequency :
- 100MHz
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 45V
- Frequency :
- 100MHz
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Forward Current :
- 250mA
- Published :
- 2009
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- Dual
- Forward Voltage :
- 1.25V
- Number of Pins :
- 3
- Max Forward Surge Current (Ifsm) :
- 9A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 215 @ 2mA 5V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Polarity/Channel Type :
- PNP
- Max Collector Current :
- 100mA
- JESD-609 Code :
- e3
- Contact Plating :
- Tin
- Transistor Type :
- PNP
- Max Repetitive Reverse Voltage (Vrrm) :
- 250V
- Length :
- 6.35mm
- Radiation Hardening :
- No
- Operating Temperature :
- 150°C TJ
- Gain Bandwidth Product :
- 100MHz
- Height :
- 6.35mm
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 250mW
- Collector Emitter Breakdown Voltage :
- 45V
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 2.5mA, 50mA
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 50V
- Pin Count :
- 3
- Power Dissipation :
- 250mW
- Series :
- Automotive, AEC-Q101
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Breakdown Voltage :
- 45V
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- BCW70
- Number of Elements :
- 1
- Width :
- 6.35mm
- Datasheets
- BCW70,215
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW70,215 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 215 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 150mV @ 2.5mA, 50mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 100mA volts at Single BJT transistors maximum.
BCW70,215 Features
the DC current gain for this device is 215 @ 2mA 5V
the vce saturation(Max) is 150mV @ 2.5mA, 50mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BCW70,215 Applications
There are a lot of Nexperia USA Inc.
BCW70,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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