BCW70LT1
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- Mfr.Part #
- BCW70LT1
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.1A SOT23-3
- Stock
- 44,713
- In Stock ：
- 44,713
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 500μA, 10mA
- Published :
- 2006
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 215 @ 2mA 5V
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -300mV
- Max Power Dissipation :
- 225mW
- Collector Emitter Breakdown Voltage :
- 45V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Length :
- 2.9mm
- Base Part Number :
- BCW70
- Element Configuration :
- Single
- Current Rating :
- -100mA
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Max Collector Current :
- 100mA
- Power Dissipation :
- 300mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 215
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Width :
- 1.3mm
- Collector Emitter Voltage (VCEO) :
- 45V
- Transistor Type :
- PNP
- Factory Lead Time :
- 2 Weeks
- Max Breakdown Voltage :
- 45V
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 225mW
- Voltage - Rated DC :
- -45V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Height :
- 940μm
- Number of Pins :
- 3
- Datasheets
- BCW70LT1
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
BCW70LT1G Overview
This device has a DC current gain of 215 @ 2mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of -300mV.A VCE saturation (Max) of 300mV @ 500μA, 10mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 45V volts can be used.A maximum collector current of 100mA volts is possible.
BCW70LT1G Features
the DC current gain for this device is 215 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 500μA, 10mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
BCW70LT1G Applications
There are a lot of ON Semiconductor
BCW70LT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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