BCW70,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Frequency :

100MHz

Collector Emitter Breakdown Voltage :

45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

215 @ 2mA 5V

Terminal Position :

Dual

Power Dissipation :

250mW

Mount :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

PNP

JESD-609 Code :

e3

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

150mV @ 2.5mA, 50mA

Time@Peak Reflow Temperature-Max (s) :

40

Max Power Dissipation :

250mW

Forward Current :

250mA

Weight :

4.535924g

Width :

6.35mm

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

100nA ICBO

Forward Voltage :

1.25V

Radiation Hardening :

No

Transition Frequency :

100MHz

Operating Temperature :

150°C TJ

Gain Bandwidth Product :

100MHz

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

5V

Contact Plating :

Tin

Number of Pins :

3

Pin Count :

3

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Polarity/Channel Type :

PNP

Length :

6.35mm

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

50V

Max Forward Surge Current (Ifsm) :

9A

Base Part Number :

BCW70

Number of Terminations :

3

Number of Elements :

1

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Max Repetitive Reverse Voltage (Vrrm) :

250V

Published :

2009

Height :

6.35mm

Transistor Application :

SWITCHING

Series :

Automotive, AEC-Q101

Max Breakdown Voltage :

45V

Collector Emitter Voltage (VCEO) :

45V

Element Configuration :

Single