BCW70,215

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

3

Polarity/Channel Type :

PNP

Published :

2009

Width :

6.35mm

Radiation Hardening :

No

Operating Temperature :

150°C TJ

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

5V

Element Configuration :

Single

Number of Elements :

1

Transition Frequency :

100MHz

Terminal Position :

Dual

REACH SVHC :

No SVHC

Power Dissipation :

250mW

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Number of Pins :

3

Max Collector Current :

100mA

Transistor Application :

SWITCHING

Vce Saturation (Max) @ Ib, Ic :

150mV @ 2.5mA, 50mA

Max Breakdown Voltage :

45V

Weight :

4.535924g

Contact Plating :

Tin

Max Repetitive Reverse Voltage (Vrrm) :

250V

Length :

6.35mm

Max Power Dissipation :

250mW

Max Forward Surge Current (Ifsm) :

9A

Collector Base Voltage (VCBO) :

50V

Forward Current :

250mA

Transistor Type :

PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

Automotive, AEC-Q101

Collector Emitter Voltage (VCEO) :

45V

DC Current Gain (hFE) (Min) @ Ic, Vce :

215 @ 2mA 5V

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Forward Voltage :

1.25V

Current - Collector Cutoff (Max) :

100nA ICBO

Base Part Number :

BCW70

Factory Lead Time :

4 Weeks

Mounting Type :

Surface Mount

Frequency :

100MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Height :

6.35mm

Mount :

Surface Mount

Pin Count :

3

Gain Bandwidth Product :

100MHz

Collector Emitter Breakdown Voltage :

45V