BCR562E6327HTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Height :

900μm

Package / Case :

TO-236-3, SC-59, SOT-23-3

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Max Breakdown Voltage :

50V

Voltage - Rated DC :

-50V

Mounting Type :

Surface Mount

Element Configuration :

Single

Max Operating Temperature :

150°C

Length :

2.9mm

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

300mV

Factory Lead Time :

26 Weeks

Resistor - Emitter Base (R2) :

4.7 k Ω

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Current - Collector Cutoff (Max) :

100nA ICBO

Published :

2011

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Frequency - Transition :

150MHz

Number of Elements :

1

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 50mA 5V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Halogen Free :

Not Halogen Free

Transition Frequency :

150MHz

Width :

1.3mm

hFE Min :

60

Min Operating Temperature :

-65°C

Base Part Number :

BCR562

ECCN Code :

EAR99

Polarity :

PNP

Max Power Dissipation :

330mW

Current Rating :

-500mA

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

300mV

Collector Emitter Breakdown Voltage :

50V

Transistor Type :

PNP - Pre-Biased

Terminal Form :

Gull wing

Max Collector Current :

500mA

Resistor - Base (R1) :

4.7 k Ω