BCR555E6433HTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Factory Lead Time :

26 Weeks

Transistor Type :

PNP - Pre-Biased

Transistor Element Material :

SILICON

Published :

2011

Polarity/Channel Type :

PNP

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 50mA

Transition Frequency :

150MHz

Pbfree Code :

yes

Power - Max :

330mW

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 0.22

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 50mA 5V

Resistor - Base (R1) :

2.2 k Ω

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Frequency - Transition :

150MHz

Surface Mount :

yes

Number of Terminations :

3

Terminal Position :

Dual

Current - Collector (Ic) (Max) :

500mA

Voltage - Collector Emitter Breakdown (Max) :

50V

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G3

Terminal Form :

Gull wing

Base Part Number :

BCR555

Resistor - Emitter Base (R2) :

10 k Ω

Current - Collector Cutoff (Max) :

100nA ICBO