BC848CPDW1T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current Rating :

100mA

Frequency :

100MHz

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Factory Lead Time :

8 Weeks

Max Breakdown Voltage :

40V

Lead Free :

Lead Free

Collector Emitter Saturation Voltage :

600mV

Number of Pins :

6

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Pin Count :

6

Emitter Base Voltage (VEBO) :

5V

Time@Peak Reflow Temperature-Max (s) :

40

Transition Frequency :

100MHz

Max Power Dissipation :

380mW

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

30V

Gain Bandwidth Product :

100MHz

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

hFE Min :

270

Surface Mount :

yes

Voltage - Rated DC :

30V

Transistor Element Material :

SILICON

Transistor Type :

NPN, PNP

Width :

1.35mm

Power - Max :

250mW

Current - Collector Cutoff (Max) :

15nA ICBO

Element Configuration :

Dual

Length :

2.2mm

Number of Elements :

2

Package / Case :

6-TSSOP, SC-88, SOT-363

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Pbfree Code :

yes

Collector Base Voltage (VCBO) :

30V

Height :

1mm

Transistor Application :

AMPLIFIER

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

420 @ 2mA 5V

Packaging :

Tape and Reel (TR)

Polarity :

NPN, PNP

Power Dissipation :

380mW

ECCN Code :

EAR99

JESD-609 Code :

e3

Number of Terminations :

6

Published :

2009

Collector Emitter Breakdown Voltage :

30V

Mounting Type :

Surface Mount