BC848BWT106
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- Mfr.Part #
- BC848BWT106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 0.1A UMT3
- Stock
- 15,602
- In Stock ：
- 15,602
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Package / Case :
- SC-70, SOT-323
- hFE Min :
- 200
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 30V
- Gain Bandwidth Product :
- 200MHz
- Transistor Type :
- NPN
- Max Collector Current :
- 100mA
- Collector Emitter Saturation Voltage :
- 600mV
- Factory Lead Time :
- 13 Weeks
- Max Breakdown Voltage :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Emitter Breakdown Voltage :
- 30V
- JESD-609 Code :
- e1
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Continuous Collector Current :
- 100mA
- Collector Emitter Voltage (VCEO) :
- 30V
- HTS Code :
- 8541.21.00.75
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2005
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Transition Frequency :
- 200MHz
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Current Rating :
- 100mA
- Terminal Finish :
- TIN SILVER COPPER
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Max Power Dissipation :
- 200mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 5V
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 30V
- Contact Plating :
- Copper, Silver, Tin
- Pin Count :
- 3
- Datasheets
- BC848BWT106
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
BC848BWT106 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 2mA 5V.The collector emitter saturation voltage is 600mV, which allows for maximum design flexibility.When VCE saturation is 600mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 100mA for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 100mA.In the part, the transition frequency is 200MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 100mA volts can be achieved.
BC848BWT106 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC848BWT106 Applications
There are a lot of ROHM Semiconductor
BC848BWT106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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