BC847BPDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Factory Lead Time :

5 Weeks

Element Configuration :

Dual

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

45V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Lead Free :

Lead Free

Package / Case :

SOT-563, SOT-666

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Published :

2004

Collector Base Voltage (VCBO) :

50V

Surface Mount :

yes

Collector Emitter Saturation Voltage :

600mV

Packaging :

Tape and Reel (TR)

Pin Count :

6

Power Dissipation :

500mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Max Breakdown Voltage :

45V

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Length :

1.7mm

Polarity :

NPN, PNP

Pbfree Code :

yes

Frequency :

100MHz

Current Rating :

100mA

Height :

600μm

Collector Emitter Voltage (VCEO) :

45V

Contact Plating :

Tin

Halogen Free :

Halogen Free

Number of Pins :

6

Width :

1.3mm

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Transistor Type :

NPN, PNP

Gain Bandwidth Product :

100MHz

Base Part Number :

BC847BPD

hFE Min :

200

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Current - Collector Cutoff (Max) :

15nA ICBO

Emitter Base Voltage (VEBO) :

5V

ECCN Code :

EAR99

Max Collector Current :

100mA

Max Power Dissipation :

357mW

Transition Frequency :

100MHz

Number of Elements :

2

REACH SVHC :

No SVHC

Terminal Form :

Flat