BC847BPDXV6T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Type :

NPN, PNP

Power Dissipation :

500mW

Max Power Dissipation :

357mW

ECCN Code :

EAR99

Number of Elements :

2

Gain Bandwidth Product :

100MHz

Transistor Application :

AMPLIFIER

Length :

1.7mm

Contact Plating :

Tin

Current - Collector Cutoff (Max) :

15nA ICBO

Collector Emitter Saturation Voltage :

600mV

Max Breakdown Voltage :

45V

Current Rating :

100mA

Surface Mount :

yes

Radiation Hardening :

No

Pin Count :

6

Frequency :

100MHz

Base Part Number :

BC847BPD

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 2mA 5V

Halogen Free :

Halogen Free

Max Collector Current :

100mA

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

hFE Min :

200

JESD-609 Code :

e3

Transition Frequency :

100MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Number of Terminations :

6

Lead Free :

Lead Free

Number of Pins :

6

Factory Lead Time :

5 Weeks

Polarity :

NPN, PNP

Terminal Form :

Flat

Pbfree Code :

yes

Height :

600μm

Element Configuration :

Dual

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

600mV @ 5mA, 100mA

Collector Emitter Breakdown Voltage :

45V

Collector Emitter Voltage (VCEO) :

45V

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Packaging :

Tape and Reel (TR)

Emitter Base Voltage (VEBO) :

5V

Collector Base Voltage (VCBO) :

50V

Package / Case :

SOT-563, SOT-666

RoHS Status :

ROHS3 Compliant

Width :

1.3mm