BC489G
- Mfr.Part #
- BC489G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 3,927
- In Stock :
- 3,927
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Frequency :
- 200MHz
- Voltage - Rated DC :
- 80V
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Published :
- 2006
- Terminal Position :
- BOTTOM
- Lifecycle Status :
- OBSOLETE (Last Updated: 4 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- 500mA
- Transistor Application :
- SWITCHING
- Packaging :
- Bulk
- Polarity/Channel Type :
- NPN
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Power Dissipation :
- 625mW
- Mounting Type :
- Through Hole
- Transition Frequency :
- 200MHz
- Collector Emitter Saturation Voltage :
- 300mV
- Number of Terminations :
- 3
- Max Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 80V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Base Part Number :
- BC489
- Operating Temperature :
- -55°C~150°C TJ
- hFE Min :
- 15
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 1A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 80V
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 60 @ 100mA 2V
- Collector Emitter Voltage (VCEO) :
- 80V
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 200MHz
- Max Collector Current :
- 500mA
- Datasheets
- BC489G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC489G Overview
This device has a DC current gain of 60 @ 100mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 300mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 500mA.In this part, there is a transition frequency of 200MHz.The maximum collector current is 500mA volts.
BC489G Features
the DC current gain for this device is 60 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 200MHz
BC489G Applications
There are a lot of ON Semiconductor
BC489G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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