BC489AG
- Mfr.Part #
- BC489AG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 29,051
- In Stock :
- 29,051
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- BOTTOM
- Published :
- 2007
- hFE Min :
- 15
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Base Voltage (VCBO) :
- 80V
- Voltage - Rated DC :
- 80V
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Through Hole
- Power Dissipation :
- 625mW
- Collector Emitter Voltage (VCEO) :
- 80V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Polarity/Channel Type :
- NPN
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 1A
- Pbfree Code :
- yes
- Pin Count :
- 3
- Max Power Dissipation :
- 625mW
- Current Rating :
- 500mA
- Frequency :
- 200MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Base Part Number :
- BC489
- Transition Frequency :
- 200MHz
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 200MHz
- Packaging :
- Bulk
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Collector Emitter Saturation Voltage :
- 300mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Datasheets
- BC489AG
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC489AG Overview
In this device, the DC current gain is 100 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BC489AG Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 200MHz
BC489AG Applications
There are a lot of ON Semiconductor
BC489AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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