BC489BZL1G
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- Mfr.Part #
- BC489BZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 32,761
- In Stock ：
- 32,761
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Additional Feature :
- EUROPEAN PART NUMBER
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Terminations :
- 3
- Packaging :
- Tape and Box (TB)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 2V
- Max Power Dissipation :
- 625mW
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 40
- Transistor Type :
- NPN
- Max Collector Current :
- 500mA
- JESD-609 Code :
- e1
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- HTS Code :
- 8541.21.00.75
- Collector Emitter Voltage (VCEO) :
- 300mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Pin Count :
- 3
- Current Rating :
- 500mA
- Gain Bandwidth Product :
- 200MHz
- Collector Base Voltage (VCBO) :
- 80V
- Reach Compliance Code :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 1A
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Qualification Status :
- Not Qualified
- Continuous Collector Current :
- 500mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Base Part Number :
- BC489
- Voltage - Rated DC :
- 80V
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Collector Emitter Breakdown Voltage :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 200MHz
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- 300mV
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- Datasheets
- BC489BZL1G
BC489BZL1G Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC489BZL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 2V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 100mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 200MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
BC489BZL1G Features
the DC current gain for this device is 160 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 200MHz
BC489BZL1G Applications
There are a lot of ON Semiconductor
BC489BZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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