BC489BZL1G
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- Mfr.Part #
- BC489BZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 32,761
- In Stock ：
- 32,761
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- RoHS Status :
- RoHS Compliant
- Collector Base Voltage (VCBO) :
- 80V
- hFE Min :
- 40
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 625mW
- Number of Pins :
- 3
- Max Collector Current :
- 500mA
- Transistor Type :
- NPN
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 2V
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- 80V
- JESD-609 Code :
- e1
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 1A
- Operating Temperature :
- -55°C~150°C TJ
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Base Part Number :
- BC489
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Additional Feature :
- EUROPEAN PART NUMBER
- Mounting Type :
- Through Hole
- Transition Frequency :
- 200MHz
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 300mV
- Current Rating :
- 500mA
- HTS Code :
- 8541.21.00.75
- Emitter Base Voltage (VEBO) :
- 5V
- Continuous Collector Current :
- 500mA
- Packaging :
- Tape and Box (TB)
- Gain Bandwidth Product :
- 200MHz
- Reach Compliance Code :
- Unknown
- Published :
- 2006
- Collector Emitter Breakdown Voltage :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Collector Emitter Saturation Voltage :
- 300mV
- Number of Elements :
- 1
- Datasheets
- BC489BZL1G
BC489BZL1G Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC489BZL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 2V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 100mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 200MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
BC489BZL1G Features
the DC current gain for this device is 160 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 200MHz
BC489BZL1G Applications
There are a lot of ON Semiconductor
BC489BZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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