BC489BZL1G
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- Mfr.Part #
- BC489BZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 32,761
- In Stock ：
- 32,761
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 300mV
- JESD-609 Code :
- e1
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- Reach Compliance Code :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 200MHz
- Collector Base Voltage (VCBO) :
- 80V
- Current Rating :
- 500mA
- Base Part Number :
- BC489
- Transition Frequency :
- 200MHz
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pbfree Code :
- yes
- hFE Min :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Collector Current :
- 500mA
- Additional Feature :
- EUROPEAN PART NUMBER
- Collector Emitter Breakdown Voltage :
- 80V
- Mount :
- Through Hole
- Max Collector Current :
- 500mA
- Max Power Dissipation :
- 625mW
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 2V
- Published :
- 2006
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 1A
- Transistor Type :
- NPN
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Qualification Status :
- Not Qualified
- HTS Code :
- 8541.21.00.75
- Voltage - Rated DC :
- 80V
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Box (TB)
- Collector Emitter Saturation Voltage :
- 300mV
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Datasheets
- BC489BZL1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC489BZL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 2V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 100mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 200MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
BC489BZL1G Features
the DC current gain for this device is 160 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 200MHz
BC489BZL1G Applications
There are a lot of ON Semiconductor
BC489BZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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