BC489BZL1G
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- Mfr.Part #
- BC489BZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 32,761
- In Stock ：
- 32,761
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Additional Feature :
- EUROPEAN PART NUMBER
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 300mV
- Peak Reflow Temperature (Cel) :
- 260
- Gain Bandwidth Product :
- 200MHz
- Collector Emitter Saturation Voltage :
- 300mV
- Collector Base Voltage (VCBO) :
- 80V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging :
- Tape and Box (TB)
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Rated DC :
- 80V
- Continuous Collector Current :
- 500mA
- Terminal Position :
- BOTTOM
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Current Rating :
- 500mA
- JESD-609 Code :
- e1
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 200MHz
- Number of Elements :
- 1
- Max Collector Current :
- 500mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- Unknown
- Pin Count :
- 3
- RoHS Status :
- RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 2V
- Published :
- 2006
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 1A
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 40
- Base Part Number :
- BC489
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Transistor Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Terminations :
- 3
- HTS Code :
- 8541.21.00.75
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Max Power Dissipation :
- 625mW
- Datasheets
- BC489BZL1G
BC489BZL1G Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC489BZL1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 160 @ 100mA 2V.With a collector emitter saturation voltage of 300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 100mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 200MHz is present in the part.Collector current can be as low as 500mA volts at its maximum.
BC489BZL1G Features
the DC current gain for this device is 160 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 200MHz
BC489BZL1G Applications
There are a lot of ON Semiconductor
BC489BZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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