BC489AZL1
- Mfr.Part #
- BC489AZL1
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 8,841
- In Stock :
- 8,841
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Additional Feature :
- EUROPEAN PART NUMBER
- JESD-609 Code :
- e0
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 200MHz
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Voltage (VCEO) :
- 300mV
- Mounting Type :
- Through Hole
- RoHS Status :
- Non-RoHS Compliant
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- HTS Code :
- 8541.21.00.75
- Polarity/Channel Type :
- NPN
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Rated DC :
- 80V
- Base Part Number :
- BC489
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Continuous Collector Current :
- 500mA
- Gain Bandwidth Product :
- 200MHz
- hFE Min :
- 40
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Transistor Type :
- NPN
- Published :
- 2006
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Box (TB)
- Pin Count :
- 3
- Current Rating :
- 500mA
- Collector Emitter Breakdown Voltage :
- 80V
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 300mV
- Collector Base Voltage (VCBO) :
- 80V
- Lifecycle Status :
- OBSOLETE (Last Updated: 3 days ago)
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 625mW
- Lead Free :
- Contains Lead
- Reach Compliance Code :
- not_compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 240
- Number of Elements :
- 1
- Max Collector Current :
- 500mA
- Datasheets
- BC489AZL1
BC489AZL1 Documents

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC489AZL1 Overview
DC current gain in this device equals 100 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 100mA, 1A.Single BJT transistor is essential to maintain the continuous collector voltage at 500mA to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 500mA current rating.As a result, the part has a transition frequency of 200MHz.In extreme cases, the collector current can be as low as 500mA volts.
BC489AZL1 Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 200MHz
BC489AZL1 Applications
There are a lot of ON Semiconductor
BC489AZL1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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