BC489AZL1G
- Mfr.Part #
- BC489AZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 25,151
- In Stock :
- 25,151
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Box (TB)
- Element Configuration :
- Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Lifecycle Status :
- OBSOLETE (Last Updated: 4 days ago)
- Reach Compliance Code :
- Unknown
- Gain Bandwidth Product :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Voltage - Rated DC :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 200MHz
- Lead Free :
- Lead Free
- hFE Min :
- 40
- Collector Base Voltage (VCBO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 1A
- Collector Emitter Voltage (VCEO) :
- 300mV
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 80V
- Number of Pins :
- 3
- Max Power Dissipation :
- 625mW
- JESD-609 Code :
- e1
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Saturation Voltage :
- 300mV
- ECCN Code :
- EAR99
- Base Part Number :
- BC489
- Max Collector Current :
- 500mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Polarity/Channel Type :
- NPN
- Qualification Status :
- Not Qualified
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2006
- Current Rating :
- 500mA
- HTS Code :
- 8541.21.00.75
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Additional Feature :
- EUROPEAN PART NUMBER
- Datasheets
- BC489AZL1G

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
BC489AZL1G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 2V.The collector emitter saturation voltage is 300mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 200MHz.A maximum collector current of 500mA volts can be achieved.
BC489AZL1G Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 200MHz
BC489AZL1G Applications
There are a lot of ON Semiconductor
BC489AZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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