BC489A
- Mfr.Part #
- BC489A
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 38,009
- In Stock :
- 38,009
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 1A
- Frequency :
- 200MHz
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 625mW
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- BOTTOM
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 300mV
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Collector Emitter Voltage (VCEO) :
- 80V
- Mount :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Polarity/Channel Type :
- NPN
- Current Rating :
- 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 80V
- Transition Frequency :
- 200MHz
- Gain Bandwidth Product :
- 200MHz
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Collector Base Voltage (VCBO) :
- 80V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Emitter Base Voltage (VEBO) :
- 5V
- Base Part Number :
- BC489
- hFE Min :
- 15
- Max Collector Current :
- 500mA
- Published :
- 2007
- JESD-609 Code :
- e1
- Power Dissipation :
- 625mW
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- BC489A
BC489A Documents
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NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC489AG Overview
In this device, the DC current gain is 100 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BC489AG Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 200MHz
BC489AG Applications
There are a lot of ON Semiconductor
BC489AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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