BC489A
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- Mfr.Part #
- BC489A
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 38,009
- In Stock ：
- 38,009
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 625mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Collector Base Voltage (VCBO) :
- 80V
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 200MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Max Power Dissipation :
- 625mW
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 100mA, 1A
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e1
- Collector Emitter Voltage (VCEO) :
- 80V
- Base Part Number :
- BC489
- Element Configuration :
- Single
- Number of Pins :
- 3
- Collector Emitter Saturation Voltage :
- 300mV
- Current Rating :
- 500mA
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 500mA
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 80V
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Pbfree Code :
- yes
- Frequency :
- 200MHz
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2007
- Mount :
- Through Hole
- Gain Bandwidth Product :
- 200MHz
- Packaging :
- Bulk
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Type :
- NPN
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- hFE Min :
- 15
- Datasheets
- BC489A
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
BC489AG Overview
In this device, the DC current gain is 100 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 100mA, 1A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BC489AG Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 200MHz
BC489AG Applications
There are a lot of ON Semiconductor
BC489AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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