AT-32011-TR2G

Manufacturer :

Broadcom

Product Category :

Transistors - Bipolar (BJT) - RF

Noise Figure (dB Typ @ f) :

1dB ~ 1.3dB @ 900MHz

Qualification Status :

Not Qualified

Current Rating :

32mA

Collector Emitter Voltage (VCEO) :

5.5V

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

11V

Voltage - Rated DC :

5.5V

Number of Elements :

1

JESD-609 Code :

e3

Max Collector Current :

32mA

Terminal Finish :

Matte Tin (Sn)

Additional Feature :

HIGH RELIABILITY, LOW NOISE

Factory Lead Time :

6 Weeks

Frequency :

30GHz

Transistor Type :

NPN

Mount :

Surface Mount

Published :

2009

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

4

Transistor Application :

SWITCHING

Gain Bandwidth Product :

10 GHz

Max Power Dissipation :

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 2mA 2.7V

Configuration :

Single

Operating Temperature :

150°C TJ

Gain :

12.5dB ~ 14dB

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Number of Pins :

4

Base Part Number :

AT32011

Power Dissipation :

200mW

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Terminal Position :

Dual

Case Connection :

COLLECTOR

Continuous Collector Current :

32mA

Contact Plating :

Gold

Collector Emitter Breakdown Voltage :

5.5V

Package / Case :

TO-253-4, TO-253AA

Emitter Base Voltage (VEBO) :

1.5V

Packaging :

Tape and Reel (TR)