AT-30533-TR1G

Manufacturer :

Broadcom

Product Category :

Transistors - Bipolar (BJT) - RF

Operating Temperature :

150°C TJ

Transistor Element Material :

SILICON

Max Power Dissipation :

100mW

Published :

2005

Frequency :

10GHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

5.5V

Radiation Hardening :

No

Contact Plating :

Gold

DC Current Gain (hFE) (Min) @ Ic, Vce :

70 @ 1mA 2.7V

Additional Feature :

High Reliability

Collector Base Voltage (VCBO) :

11V

Current Rating :

8mA

Gain :

11dB ~ 13dB

Power Dissipation :

100mW

Max Collector Current :

8mA

Package / Case :

TO-236-3, SC-59, SOT-23-3

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

5.5V

Terminal Position :

Dual

Gain Bandwidth Product :

10 GHz

Number of Pins :

3

Peak Reflow Temperature (Cel) :

260

Transistor Type :

NPN

Mount :

Surface Mount

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Polarity/Channel Type :

NPN

Factory Lead Time :

6 Weeks

Continuous Collector Current :

8mA

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Emitter Base Voltage (VEBO) :

1.5V

Element Configuration :

Single

Number of Terminations :

3

Number of Elements :

1

JESD-609 Code :

e3

Noise Figure (dB Typ @ f) :

1.1dB ~ 1.4dB @ 900MHz

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

5.5V