APTC80TDU15PG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

6 N-Channel (3-Phase Bridge)

Case Connection :

Isolated

Number of Elements :

6

Number of Pins :

6

Additional Feature :

AVALANCHE RATED

Published :

2006

Pin Count :

21

Pbfree Code :

yes

Configuration :

3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

Operating Temperature :

-40°C~150°C TJ

Terminal Form :

UNSPECIFIED

Pulsed Drain Current-Max (IDM) :

110A

Power Dissipation :

277W

Mounting Type :

Chassis Mount

Terminal Finish :

TIN SILVER COPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3.9V @ 2mA

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

800V

Input Capacitance (Ciss) (Max) @ Vds :

4507pF @ 25V

Mount :

Chassis Mount, Screw

Radiation Hardening :

No

Continuous Drain Current (ID) :

28A

Package / Case :

SP6

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

150m Ω @ 14A, 10V

Drain-source On Resistance-Max :

0.15Ohm

Number of Terminations :

21

Factory Lead Time :

36 Weeks

JESD-609 Code :

e1

RoHS Status :

RoHS Compliant

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Terminal Position :

UPPER

Operating Mode :

ENHANCEMENT MODE

Rise Time :

13ns

JESD-30 Code :

R-XUFM-X21

Packaging :

Bulk

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

800V

Turn On Delay Time :

10 ns

FET Feature :

Standard

Fall Time (Typ) :

35 ns

Turn-Off Delay Time :

83 ns

Gate to Source Voltage (Vgs) :

30V

Max Power Dissipation :

277W