APTC80TDU15PG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

21

Package / Case :

SP6

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

28A

FET Type :

6 N-Channel (3-Phase Bridge)

Published :

2006

Vgs(th) (Max) @ Id :

3.9V @ 2mA

ECCN Code :

EAR99

Mounting Type :

Chassis Mount

Rds On (Max) @ Id, Vgs :

150m Ω @ 14A, 10V

JESD-609 Code :

e1

Input Capacitance (Ciss) (Max) @ Vds :

4507pF @ 25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

800V

Configuration :

3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-30 Code :

R-XUFM-X21

Drain to Source Voltage (Vdss) :

800V

Mount :

Chassis Mount, Screw

Terminal Finish :

TIN SILVER COPPER

Turn-Off Delay Time :

83 ns

Drain-source On Resistance-Max :

0.15Ohm

Radiation Hardening :

No

Power Dissipation :

277W

Case Connection :

Isolated

FET Feature :

Standard

Pbfree Code :

yes

Factory Lead Time :

36 Weeks

Pin Count :

21

Transistor Application :

SWITCHING

Operating Temperature :

-40°C~150°C TJ

Rise Time :

13ns

Additional Feature :

AVALANCHE RATED

Pulsed Drain Current-Max (IDM) :

110A

Number of Elements :

6

Packaging :

Bulk

Turn On Delay Time :

10 ns

Number of Pins :

6

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Max Power Dissipation :

277W

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

UNSPECIFIED

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

35 ns

Terminal Position :

UPPER