APTC80TA15PG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

277W

Case Connection :

Isolated

Mounting Type :

Chassis Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

13ns

Continuous Drain Current (ID) :

28A

Number of Terminations :

21

RoHS Status :

RoHS Compliant

FET Type :

6 N-Channel (3-Phase Bridge)

Terminal Finish :

TIN SILVER COPPER

FET Feature :

Standard

Rds On (Max) @ Id, Vgs :

150m Ω @ 14A, 10V

ECCN Code :

EAR99

Terminal Position :

UPPER

Vgs(th) (Max) @ Id :

3.9V @ 2mA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-XUFM-X21

Additional Feature :

AVALANCHE RATED

Number of Pins :

6

Package / Case :

SP6

Pin Count :

21

Terminal Form :

UNSPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

4507pF @ 25V

Turn-Off Delay Time :

83 ns

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

800V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.15Ohm

Packaging :

Bulk

Mount :

Chassis Mount, Screw

Fall Time (Typ) :

35 ns

Configuration :

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Operating Temperature :

-40°C~150°C TJ

Published :

2012

Transistor Application :

SWITCHING

Max Power Dissipation :

277W

Number of Elements :

6

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

110A

JESD-609 Code :

e1

Turn On Delay Time :

10 ns

Pbfree Code :

yes

DS Breakdown Voltage-Min :

800V

Factory Lead Time :

36 Weeks