APTC80H29T3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

36 Weeks

FET Feature :

Standard

Case Connection :

Isolated

Rise Time :

13ns

Gate to Source Voltage (Vgs) :

30V

Radiation Hardening :

No

Terminal Finish :

TIN SILVER COPPER

Mount :

Chassis Mount, Screw

Turn-Off Delay Time :

83 ns

Number of Elements :

4

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

800V

JESD-30 Code :

R-XUFM-X25

Terminal Form :

UNSPECIFIED

Pin Count :

25

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Transistor Element Material :

SILICON

Terminal Position :

UPPER

Operating Temperature :

-40°C~150°C TJ

Turn On Delay Time :

10 ns

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

35 ns

Number of Terminations :

25

Rds On (Max) @ Id, Vgs :

290m Ω @ 7.5A, 10V

Mounting Type :

Chassis Mount

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

15A

Package / Case :

SP3

Input Capacitance (Ciss) (Max) @ Vds :

2254pF @ 25V

Drain to Source Voltage (Vdss) :

800V

Packaging :

Bulk

Vgs(th) (Max) @ Id :

3.9V @ 1mA

Avalanche Energy Rating (Eas) :

670 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Drain-source On Resistance-Max :

0.29Ohm

Power Dissipation :

156W

Configuration :

COMPLEX

Pulsed Drain Current-Max (IDM) :

60A

Max Power Dissipation :

156W

Number of Pins :

3

Published :

2012

Pbfree Code :

yes

FET Type :

4 N-Channel (H-Bridge)