APTC80H29T1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

4 N-Channel (H-Bridge)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Reach Compliance Code :

Unknown

Package / Case :

SP1

Power Dissipation :

156W

Mounting Type :

Chassis Mount

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

800V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2007

Number of Elements :

4

Qualification Status :

Not Qualified

Max Power Dissipation :

156W

Terminal Position :

UPPER

Packaging :

Bulk

Drain-source On Resistance-Max :

0.29Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

1

Case Connection :

Isolated

DS Breakdown Voltage-Min :

800V

Rds On (Max) @ Id, Vgs :

290m Ω @ 7.5A, 10V

Terminal Finish :

TIN SILVER COPPER

Number of Terminations :

12

Continuous Drain Current (ID) :

15A

Input Capacitance (Ciss) (Max) @ Vds :

2254pF @ 25V

Transistor Application :

SWITCHING

FET Feature :

Standard

Pulsed Drain Current-Max (IDM) :

60A

Gate Charge (Qg) (Max) @ Vgs :

90nC @ 10V

Pin Count :

12

Avalanche Energy Rating (Eas) :

670 mJ

Configuration :

COMPLEX

Operating Temperature :

-40°C~150°C TJ

Terminal Form :

UNSPECIFIED

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

3.9V @ 1mA

JESD-609 Code :

e1

Transistor Element Material :

SILICON

Mount :

Chassis Mount, Screw