APTC80DSK15T3G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2012

Operating Mode :

ENHANCEMENT MODE

Packaging :

Bulk

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

UNSPECIFIED

Mounting Type :

Chassis Mount

Terminal Position :

UPPER

Transistor Application :

SWITCHING

Pbfree Code :

yes

Factory Lead Time :

22 Weeks

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Pulsed Drain Current-Max (IDM) :

110A

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Terminal Finish :

TIN SILVER COPPER

Input Capacitance (Ciss) (Max) @ Vds :

4507pF @ 25V

RoHS Status :

RoHS Compliant

Rise Time :

13ns

Vgs(th) (Max) @ Id :

3.9V @ 2mA

Power Dissipation :

277W

Radiation Hardening :

No

FET Type :

2 N-Channel (Dual)

Operating Temperature :

-40°C~150°C TJ

Rds On (Max) @ Id, Vgs :

150m Ω @ 14A, 10V

Pin Count :

25

Case Connection :

Isolated

Mount :

Chassis Mount, Screw

Turn On Delay Time :

10 ns

Number of Elements :

2

Continuous Drain Current (ID) :

28A

Number of Pins :

3

Drain-source On Resistance-Max :

0.15Ohm

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

83 ns

DS Breakdown Voltage-Min :

800V

Transistor Element Material :

SILICON

JESD-609 Code :

e1

Fall Time (Typ) :

35 ns

Avalanche Energy Rating (Eas) :

670 mJ

FET Feature :

Standard

Drain to Source Voltage (Vdss) :

800V

Max Power Dissipation :

277W

Package / Case :

SP3

Number of Terminations :

25