APTC80AM75SCG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

35 ns

Gate to Source Voltage (Vgs) :

30V

Published :

1997

Pin Count :

7

JESD-609 Code :

e1

DS Breakdown Voltage-Min :

800V

Mount :

Chassis Mount, Screw

Radiation Hardening :

No

Continuous Drain Current (ID) :

56A

Vgs(th) (Max) @ Id :

3.9V @ 4mA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Position :

UPPER

Terminal Finish :

TIN SILVER COPPER

Max Power Dissipation :

568W

Mounting Type :

Chassis Mount

Number of Elements :

2

Factory Lead Time :

22 Weeks

Rds On (Max) @ Id, Vgs :

75m Ω @ 28A, 10V

Packaging :

Bulk

Terminal Form :

UNSPECIFIED

FET Feature :

Standard

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Case Connection :

Isolated

JESD-30 Code :

R-XUFM-X7

Number of Terminations :

7

Power Dissipation :

568W

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

9015pF @ 25V

Drain to Source Voltage (Vdss) :

800V

Package / Case :

SP6

FET Type :

2 N-Channel (Half Bridge)

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

364nC @ 10V

Turn-Off Delay Time :

83 ns

Rise Time :

13ns

Number of Pins :

6

Additional Feature :

AVALANCHE RATED

Turn On Delay Time :

10 ns

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.075Ohm

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant