APTC80A15T1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Max Power Dissipation :

277W

Power Dissipation :

277W

Number of Elements :

2

Reach Compliance Code :

Unknown

Number of Pins :

1

Packaging :

Bulk

Mount :

Chassis Mount, Screw

Avalanche Energy Rating (Eas) :

670 mJ

Mounting Type :

Chassis Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

800V

Number of Terminations :

12

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

3.9V @ 2mA

Additional Feature :

AVALANCHE RATED

Terminal Form :

UNSPECIFIED

FET Feature :

Standard

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Rds On (Max) @ Id, Vgs :

150m Ω @ 14A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

800V

Package / Case :

SP1

Published :

2007

JESD-609 Code :

e1

Terminal Finish :

TIN SILVER COPPER

Continuous Drain Current (ID) :

28A

Terminal Position :

UPPER

Gate to Source Voltage (Vgs) :

30V

Case Connection :

Isolated

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-40°C~150°C TJ

Pin Count :

12

FET Type :

2 N-Channel (Half Bridge)

Input Capacitance (Ciss) (Max) @ Vds :

4507pF @ 25V