APTC80A15SCTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

800V

Mounting Type :

Chassis Mount

Vgs(th) (Max) @ Id :

3.9V @ 2mA

Transistor Application :

SWITCHING

Number of Pins :

4

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Terminal Position :

UPPER

Case Connection :

Isolated

Terminal Finish :

TIN SILVER COPPER

Input Capacitance (Ciss) (Max) @ Vds :

4507pF @ 25V

FET Type :

2 N-Channel (Half Bridge)

Additional Feature :

ULTRA-LOW RESISTANCE, AVALANCHE RATED

Rise Time :

13ns

Published :

1997

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

30V

Power Dissipation :

277W

Fall Time (Typ) :

35 ns

FET Feature :

Standard

DS Breakdown Voltage-Min :

800V

Avalanche Energy Rating (Eas) :

670 mJ

Mount :

Chassis Mount, Screw

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Terminal Form :

UNSPECIFIED

Rds On (Max) @ Id, Vgs :

150m Ω @ 14A, 10V

Pbfree Code :

yes

Transistor Element Material :

SILICON

JESD-30 Code :

R-XUFM-X10

Package / Case :

SP4

Max Power Dissipation :

277W

Drain-source On Resistance-Max :

0.15Ohm

Pin Count :

10

Turn On Delay Time :

10 ns

Factory Lead Time :

36 Weeks

Number of Terminations :

10

Turn-Off Delay Time :

83 ns

JESD-609 Code :

e1

Continuous Drain Current (ID) :

28A