APTC80A10SCTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

30V

Packaging :

Bulk

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

168A

Drain to Source Voltage (Vdss) :

800V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

4

Turn-Off Delay Time :

83 ns

FET Feature :

Standard

JESD-609 Code :

e1

Number of Terminations :

10

RoHS Status :

RoHS Compliant

Mounting Type :

Chassis Mount

Gate Charge (Qg) (Max) @ Vgs :

273nC @ 10V

Published :

1997

Terminal Form :

UNSPECIFIED

Avalanche Energy Rating (Eas) :

670 mJ

Case Connection :

Isolated

Transistor Application :

SWITCHING

Number of Elements :

2

JESD-30 Code :

R-XUFM-X10

Rise Time :

13ns

Operating Temperature :

-40°C~150°C TJ

Fall Time (Typ) :

35 ns

FET Type :

2 N-Channel (Half Bridge)

Package / Case :

SP4

Continuous Drain Current (ID) :

42A

Additional Feature :

AVALANCHE RATED

Factory Lead Time :

22 Weeks

DS Breakdown Voltage-Min :

800V

Transistor Element Material :

SILICON

Mount :

Chassis Mount, Screw

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Max Power Dissipation :

416W

Vgs(th) (Max) @ Id :

3.9V @ 3mA

Input Capacitance (Ciss) (Max) @ Vds :

6761pF @ 25V

Terminal Position :

UPPER

Turn On Delay Time :

10 ns

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.1Ohm

Power Dissipation :

416W

Pbfree Code :

yes

Pin Count :

10

Terminal Finish :

TIN SILVER COPPER

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Rds On (Max) @ Id, Vgs :

100m Ω @ 21A, 10V