APTC60TDUM35PG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

6 N-Channel (3-Phase Bridge)

Drain to Source Voltage (Vdss) :

600V

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

72A

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

200A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

84 ns

Case Connection :

Isolated

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Chassis Mount, Screw

ECCN Code :

EAR99

Number of Elements :

6

Rise Time :

30ns

Number of Terminations :

21

Transistor Element Material :

SILICON

JESD-30 Code :

R-XUFM-X21

Terminal Finish :

TIN SILVER COPPER

Configuration :

3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

518nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Additional Feature :

AVALANCHE RATED

JESD-609 Code :

e1

Terminal Position :

UPPER

Pin Count :

21

Operating Temperature :

-40°C~150°C TJ

Max Power Dissipation :

416W

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Mounting Type :

Chassis Mount

Avalanche Energy Rating (Eas) :

1800 mJ

Package / Case :

SP6

Rds On (Max) @ Id, Vgs :

35m Ω @ 72A, 10V

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

36 Weeks

Drain-source On Resistance-Max :

0.035Ohm

Vgs(th) (Max) @ Id :

3.9V @ 5.4mA

Packaging :

Bulk

Published :

2006

Turn-Off Delay Time :

283 ns

Power Dissipation :

416W

Turn On Delay Time :

21 ns

Terminal Form :

UNSPECIFIED

Number of Pins :

6

FET Feature :

Standard