APTC60TDUM35PG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2006

Terminal Position :

UPPER

Factory Lead Time :

36 Weeks

FET Type :

6 N-Channel (3-Phase Bridge)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

Mount :

Chassis Mount, Screw

Gate Charge (Qg) (Max) @ Vgs :

518nC @ 10V

Max Power Dissipation :

416W

ECCN Code :

EAR99

Number of Elements :

6

Vgs(th) (Max) @ Id :

3.9V @ 5.4mA

Pin Count :

21

Power Dissipation :

416W

Operating Temperature :

-40°C~150°C TJ

Turn-Off Delay Time :

283 ns

Transistor Element Material :

SILICON

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Pulsed Drain Current-Max (IDM) :

200A

FET Feature :

Standard

Configuration :

3 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

Packaging :

Bulk

Number of Pins :

6

Turn On Delay Time :

21 ns

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

1800 mJ

Input Capacitance (Ciss) (Max) @ Vds :

14000pF @ 25V

Continuous Drain Current (ID) :

72A

JESD-30 Code :

R-XUFM-X21

Terminal Form :

UNSPECIFIED

JESD-609 Code :

e1

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

35m Ω @ 72A, 10V

Terminal Finish :

TIN SILVER COPPER

Mounting Type :

Chassis Mount

Radiation Hardening :

No

Pbfree Code :

yes

Package / Case :

SP6

Number of Terminations :

21

Fall Time (Typ) :

84 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Rise Time :

30ns

Case Connection :

Isolated

Drain-source On Resistance-Max :

0.035Ohm