APTC60HM70T1G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Mount :

Chassis Mount, Screw

ECCN Code :

EAR99

Turn On Delay Time :

21 ns

DS Breakdown Voltage-Min :

600V

Rds On (Max) @ Id, Vgs :

70m Ω @ 39A, 10V

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

84 ns

FET Type :

4 N-Channel (H-Bridge)

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

3.9V @ 2.7mA

Terminal Finish :

TIN SILVER COPPER

Max Power Dissipation :

250W

Transistor Element Material :

SILICON

Turn-Off Delay Time :

283 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

4

Pbfree Code :

yes

JESD-609 Code :

e1

Operating Temperature :

-40°C~150°C TJ

FET Feature :

Standard

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

259nC @ 10V

Package / Case :

SP1

Rise Time :

30ns

Pin Count :

12

Drain to Source Voltage (Vdss) :

600V

Power Dissipation :

250W

Packaging :

Bulk

Mounting Type :

Chassis Mount

Number of Pins :

1

Published :

2012

Terminal Position :

UPPER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

THROUGH-HOLE

Additional Feature :

AVALANCHE RATED

Factory Lead Time :

36 Weeks

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.07Ohm

Number of Terminations :

12

Continuous Drain Current (ID) :

39A