APTC60HM45T1G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

7200pF @ 25V

Pin Count :

12

Fall Time (Typ) :

45 ns

Terminal Position :

UPPER

Number of Elements :

4

Factory Lead Time :

36 Weeks

Mounting Type :

Chassis Mount

DS Breakdown Voltage-Min :

600V

Pbfree Code :

yes

Number of Pins :

1

FET Feature :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Mount :

Chassis Mount, Screw, Through Hole

RoHS Status :

RoHS Compliant

ECCN Code :

EAR99

Rise Time :

30ns

Packaging :

Bulk

JESD-609 Code :

e1

Published :

2012

FET Type :

4 N-Channel (H-Bridge)

Drain to Source Voltage (Vdss) :

600V

Max Power Dissipation :

250W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

100 ns

Number of Terminations :

12

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Continuous Drain Current (ID) :

49A

Transistor Application :

SWITCHING

Terminal Finish :

TIN SILVER COPPER

Operating Temperature :

-40°C~150°C TJ

Vgs(th) (Max) @ Id :

3.9V @ 3mA

Power Dissipation :

250W

Rds On (Max) @ Id, Vgs :

45m Ω @ 24.5A, 10V

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Turn On Delay Time :

21 ns

Package / Case :

SP1