APTC60HM24T3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

3

Factory Lead Time :

36 Weeks

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

ECCN Code :

EAR99

Package / Case :

SP3

DS Breakdown Voltage-Min :

600V

Packaging :

Tray

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-XUFM-X20

Terminal Position :

UPPER

Number of Terminations :

20

Series :

CoolMOS™

Transistor Element Material :

SILICON

Rise Time :

30ns

RoHS Status :

RoHS Compliant

Turn On Delay Time :

21 ns

Turn-Off Delay Time :

100 ns

Input Capacitance (Ciss) (Max) @ Vds :

14400pF @ 25V

Drain to Source Voltage (Vdss) :

600V

Operating Temperature :

-40°C~150°C TJ

Published :

2012

Number of Elements :

4

FET Type :

4 N-Channel (H-Bridge)

Avalanche Energy Rating (Eas) :

1900 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Chassis Mount

Fall Time (Typ) :

45 ns

Pulsed Drain Current-Max (IDM) :

260A

Rds On (Max) @ Id, Vgs :

24m Ω @ 47.5A, 10V

Vgs(th) (Max) @ Id :

3.9V @ 5mA

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

95A

Mount :

Chassis Mount, Screw

FET Feature :

Super Junction

Transistor Application :

SWITCHING

Max Power Dissipation :

462W

Terminal Form :

UNSPECIFIED