APTC60HM24T3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Elements :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

21 ns

Fall Time (Typ) :

45 ns

Series :

CoolMOS™

Mounting Type :

Chassis Mount

Terminal Form :

UNSPECIFIED

Vgs(th) (Max) @ Id :

3.9V @ 5mA

Number of Pins :

3

FET Feature :

Super Junction

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

100 ns

Mount :

Chassis Mount, Screw

Rise Time :

30ns

Max Power Dissipation :

462W

JESD-30 Code :

R-XUFM-X20

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

1900 mJ

FET Type :

4 N-Channel (H-Bridge)

Drain to Source Voltage (Vdss) :

600V

Package / Case :

SP3

Number of Terminations :

20

Terminal Position :

UPPER

Continuous Drain Current (ID) :

95A

Pulsed Drain Current-Max (IDM) :

260A

Input Capacitance (Ciss) (Max) @ Vds :

14400pF @ 25V

Factory Lead Time :

36 Weeks

Operating Temperature :

-40°C~150°C TJ

Published :

2012

Packaging :

Tray

DS Breakdown Voltage-Min :

600V

Rds On (Max) @ Id, Vgs :

24m Ω @ 47.5A, 10V

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant