APTC60DSKM70T3G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

25

Drain to Source Voltage (Vdss) :

600V

RoHS Status :

RoHS Compliant

Reach Compliance Code :

Unknown

Qualification Status :

Not Qualified

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2006

Max Power Dissipation :

250W

FET Feature :

Standard

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.07Ohm

Terminal Form :

UNSPECIFIED

Terminal Position :

UPPER

Terminal Finish :

TIN SILVER COPPER

Pulsed Drain Current-Max (IDM) :

160A

Gate Charge (Qg) (Max) @ Vgs :

259nC @ 10V

Packaging :

Bulk

Additional Feature :

AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

70m Ω @ 39A, 10V

Avalanche Energy Rating (Eas) :

1800 mJ

Power Dissipation :

250W

Pin Count :

25

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Mounting Type :

Chassis Mount

Continuous Drain Current (ID) :

39A

Operating Temperature :

-40°C~150°C TJ

DS Breakdown Voltage-Min :

600V

Mount :

Chassis Mount, Screw

Vgs(th) (Max) @ Id :

3.9V @ 2.7mA

Number of Pins :

3

JESD-609 Code :

e1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

SP3

Number of Elements :

2