APTC60DHM24T3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual) Asymmetrical

DS Breakdown Voltage-Min :

600V

Pin Count :

25

RoHS Status :

RoHS Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Avalanche Energy Rating (Eas) :

1900 mJ

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

14400pF @ 25V

Number of Terminations :

16

Rise Time :

30ns

Terminal Position :

UPPER

Turn-Off Delay Time :

100 ns

Packaging :

Tray

Turn On Delay Time :

21 ns

Mounting Type :

Chassis Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Factory Lead Time :

36 Weeks

Drain to Source Voltage (Vdss) :

600V

Fall Time (Typ) :

45 ns

Continuous Drain Current (ID) :

95A

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3.9V @ 5mA

Gate to Source Voltage (Vgs) :

20V

Max Power Dissipation :

462W

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Radiation Hardening :

No

Configuration :

COMPLEX

Mount :

Chassis Mount, Screw

Number of Pins :

3

Operating Temperature :

-40°C~150°C TJ

Series :

CoolMOS™

Package / Case :

SP3

FET Feature :

Super Junction

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

IN PRODUCTION (Last Updated: 2 weeks ago)

Terminal Form :

UNSPECIFIED

JESD-30 Code :

R-XUFM-X16

Rds On (Max) @ Id, Vgs :

24m Ω @ 47.5A, 10V