APTC60DHM24T3G
- Mfr.Part #
- APTC60DHM24T3G
- Manufacturer
- Microchip Technology
- Package / Case
- SP3
- Datasheet
- Download
- Description
- MOSFET 2N-CH 600V 95A SP3
- Stock
- 12,171
- In Stock :
- 12,171
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Mounting Type :
- Chassis Mount
- Packaging :
- Tray
- ECCN Code :
- EAR99
- Pin Count :
- 25
- Case Connection :
- Isolated
- Vgs(th) (Max) @ Id :
- 3.9V @ 5mA
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 1900 mJ
- Max Power Dissipation :
- 462W
- Operating Temperature :
- -40°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- UPPER
- Configuration :
- COMPLEX
- Input Capacitance (Ciss) (Max) @ Vds :
- 14400pF @ 25V
- Turn-Off Delay Time :
- 100 ns
- Mount :
- Chassis Mount, Screw
- Rds On (Max) @ Id, Vgs :
- 24m Ω @ 47.5A, 10V
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 21 ns
- Number of Pins :
- 3
- JESD-30 Code :
- R-XUFM-X16
- Rise Time :
- 30ns
- Number of Elements :
- 2
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE
- Factory Lead Time :
- 36 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Package / Case :
- SP3
- Terminal Form :
- UNSPECIFIED
- Series :
- CoolMOS™
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 2 weeks ago)
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- 2 N-Channel (Dual) Asymmetrical
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Feature :
- Super Junction
- Fall Time (Typ) :
- 45 ns
- Continuous Drain Current (ID) :
- 95A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Drain to Source Voltage (Vdss) :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 300nC @ 10V
- DS Breakdown Voltage-Min :
- 600V
- Number of Terminations :
- 16
- Datasheets
- APTC60DHM24T3G
APTC60DHM24T3G datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at
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