APTC60DDAM70T3G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

39A

Case Connection :

Isolated

Max Power Dissipation :

250W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

1800 mJ

FET Type :

2 N-Channel (Dual)

Mounting Type :

Chassis Mount

Pin Count :

25

Pulsed Drain Current-Max (IDM) :

160A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Drain to Source Voltage (Vdss) :

600V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

UPPER

Number of Terminations :

25

Terminal Finish :

TIN SILVER COPPER

Package / Case :

SP3

FET Feature :

Standard

RoHS Status :

RoHS Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-40°C~150°C TJ

Terminal Form :

UNSPECIFIED

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

7000pF @ 25V

Published :

2006

Power Dissipation :

250W

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Packaging :

Bulk

Vgs(th) (Max) @ Id :

3.9V @ 2.7mA

JESD-609 Code :

e1

Number of Elements :

2

Mount :

Chassis Mount, Screw

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.07Ohm

Rds On (Max) @ Id, Vgs :

70m Ω @ 39A, 10V

DS Breakdown Voltage-Min :

600V

Gate Charge (Qg) (Max) @ Vgs :

259nC @ 10V

Number of Pins :

3