APT54GA60BD30

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Turn Off Time-Nom (toff) :

291 ns

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 32A

Td (on/off) @ 25°C :

17ns/112ns

Factory Lead Time :

33 Weeks

Polarity/Channel Type :

N-Channel

Gate-Emitter Voltage-Max :

30V

Mount :

Through Hole

IGBT Type :

PT

Number of Terminations :

3

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Pin Count :

3

Power - Max :

416W

Radiation Hardening :

No

Packaging :

Tube

Terminal Finish :

Pure Matte Tin (Sn)

Number of Elements :

1

Test Condition :

400V, 32A, 4.7 Ω, 15V

Gate Charge :

28nC

Transistor Application :

POWER CONTROL

Case Connection :

COLLECTOR

Max Collector Current :

96A

Collector Emitter Voltage (VCEO) :

600V

RoHS Status :

RoHS Compliant

Current - Collector Pulsed (Icm) :

161A

Element Configuration :

Single

JESD-30 Code :

R-PSFM-T3

Pbfree Code :

yes

Switching Energy :

534μJ (on), 466μJ (off)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-247AD

Input Type :

Standard

Package / Case :

TO-247-3

Gate-Emitter Thr Voltage-Max :

6V

Additional Feature :

LOW CONDUCTION LOSS

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Turn On Time :

37 ns

Collector Emitter Breakdown Voltage :

600V

Published :

1999

Max Power Dissipation :

416W