APT54GA60B

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

JESD-30 Code :

R-PSFM-T3

Element Configuration :

Single

Packaging :

Tube

Radiation Hardening :

No

Additional Feature :

LOW CONDUCTION LOSS

JEDEC-95 Code :

TO-247AD

Case Connection :

COLLECTOR

Collector Emitter Breakdown Voltage :

600V

Gate-Emitter Voltage-Max :

30V

Turn Off Time-Nom (toff) :

291 ns

Collector Emitter Voltage (VCEO) :

600V

Vce(on) (Max) @ Vge, Ic :

2.5V @ 15V, 32A

Max Collector Current :

96A

Test Condition :

400V, 32A, 4.7 Ω, 15V

Max Power Dissipation :

416W

Number of Elements :

1

Input Type :

Standard

RoHS Status :

RoHS Compliant

Switching Energy :

534μJ (on), 466μJ (off)

Mounting Type :

Through Hole

Gate Charge :

158nC

Package / Case :

TO-247-3

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

29 Weeks

Turn On Time :

37 ns

IGBT Type :

PT

Pin Count :

3

Current - Collector Pulsed (Icm) :

161A

Transistor Application :

POWER CONTROL

Td (on/off) @ 25°C :

17ns/112ns

Published :

1999

Polarity/Channel Type :

N-Channel

Series :

POWER MOS 8™

Number of Terminations :

3

Power - Max :

416W

JESD-609 Code :

e3

Mount :

Through Hole

Terminal Finish :

PURE MATTE TIN

Pbfree Code :

yes

Gate-Emitter Thr Voltage-Max :

6V

Operating Temperature :

-55°C~150°C TJ