APT50GT120B2RG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Radiation Hardening :

No

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

1.2kV

Terminal Finish :

TIN SILVER COPPER

Td (on/off) @ 25°C :

24ns/230ns

Test Condition :

800V, 50A, 4.7 Ω, 15V

Max Power Dissipation :

625W

Turn On Time :

77 ns

Case Connection :

COLLECTOR

Number of Terminations :

3

Input Type :

Standard

Number of Elements :

1

Turn Off Time-Nom (toff) :

303 ns

Current - Collector Pulsed (Icm) :

150A

Number of Pins :

3

Turn On Delay Time :

24 ns

Vce(on) (Max) @ Vge, Ic :

3.7V @ 15V, 50A

Gate Charge :

340nC

Pin Count :

3

Power - Max :

625W

JESD-609 Code :

e1

Switching Energy :

2330μJ (off)

Transistor Element Material :

SILICON

Collector Emitter Breakdown Voltage :

1.2kV

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Lead Free :

Lead Free

Max Collector Current :

94A

Pbfree Code :

yes

Series :

Thunderbolt IGBT®

Voltage - Collector Emitter Breakdown (Max) :

1200V

IGBT Type :

NPT

Mount :

Through Hole

Package / Case :

TO-247-3

Factory Lead Time :

24 Weeks

Turn-Off Delay Time :

230 ns

Element Configuration :

Single

Transistor Application :

POWER CONTROL

RoHS Status :

RoHS Compliant