APT50GP60LDLG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Radiation Hardening :

No

Polarity/Channel Type :

N-Channel

Max Power Dissipation :

625W

Td (on/off) @ 25°C :

19ns/85ns

Mounting Type :

Through Hole

JESD-609 Code :

e1

Current - Collector Pulsed (Icm) :

190A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

600V

Transistor Application :

Motor Control

Input Type :

Standard

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Turn Off Time-Nom (toff) :

200 ns

IGBT Type :

PT

Mount :

Through Hole

Number of Terminations :

3

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Switching Energy :

456μJ (on), 635μJ (off)

Max Collector Current :

150A

Power - Max :

625W

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Case Connection :

COLLECTOR

Published :

1999

ECCN Code :

EAR99

Pbfree Code :

yes

Transistor Element Material :

SILICON

Package / Case :

TO-264-3, TO-264AA

Turn On Time :

55 ns

Gate Charge :

165nC

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 50A

Pin Count :

3

Test Condition :

400V, 50A, 4.3 Ω, 15V

Collector Emitter Breakdown Voltage :

600V

RoHS Status :

RoHS Compliant

Element Configuration :

Single