APT50GP60LDLG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Max Collector Current :

150A

Collector Emitter Breakdown Voltage :

600V

Gate Charge :

165nC

Switching Energy :

456μJ (on), 635μJ (off)

Transistor Application :

Motor Control

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Turn On Time :

55 ns

Element Configuration :

Single

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

IGBT Type :

PT

ECCN Code :

EAR99

Turn Off Time-Nom (toff) :

200 ns

Current - Collector Pulsed (Icm) :

190A

Radiation Hardening :

No

Td (on/off) @ 25°C :

19ns/85ns

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Package / Case :

TO-264-3, TO-264AA

Power - Max :

625W

Mount :

Through Hole

Input Type :

Standard

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 50A

JESD-30 Code :

R-PSFM-T3

Number of Terminations :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Published :

1999

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

600V

RoHS Status :

RoHS Compliant

Pin Count :

3

Transistor Element Material :

SILICON

Case Connection :

COLLECTOR

Test Condition :

400V, 50A, 4.3 Ω, 15V

Max Power Dissipation :

625W