APT50GP60B2DQ2G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Published :

1999

Pbfree Code :

yes

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Pin Count :

3

Element Configuration :

Single

Max Collector Current :

150A

Current - Collector Pulsed (Icm) :

190A

Packaging :

Tube

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

600V

Polarity/Channel Type :

N-Channel

Case Connection :

COLLECTOR

Number of Pins :

3

Radiation Hardening :

No

Switching Energy :

465μJ (on), 635μJ (off)

Voltage - Rated DC :

600V

Mount :

Through Hole

Collector Emitter Breakdown Voltage :

600V

Series :

POWER MOS 7®

Test Condition :

400V, 50A, 4.3 Ω, 15V

IGBT Type :

PT

Current Rating :

150A

Operating Temperature :

-55°C~150°C TJ

Turn Off Time-Nom (toff) :

200 ns

JESD-609 Code :

e1

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 50A

Transistor Application :

POWER CONTROL

Additional Feature :

LOW CONDUCTION LOSS

Turn On Time :

55 ns

Max Power Dissipation :

625W

Terminal Finish :

TIN SILVER COPPER

Input Type :

Standard

Number of Elements :

1

Gate-Emitter Thr Voltage-Max :

6V

Package / Case :

TO-247-3 Variant

Td (on/off) @ 25°C :

19ns/85ns

Gate Charge :

165nC

Factory Lead Time :

30 Weeks