APT50GN60BG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Width :

16.26mm

Collector Emitter Breakdown Voltage :

600V

Collector Emitter Saturation Voltage :

1.5V

Input Type :

Standard

Switching Energy :

1185μJ (on), 1565μJ (off)

Package / Case :

TO-247-3

Test Condition :

400V, 50A, 4.3 Ω, 15V

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Element Configuration :

Single

Pin Count :

3

Turn On Time :

45 ns

Vce(on) (Max) @ Vge, Ic :

1.85V @ 15V, 50A

Operating Temperature :

-55°C~175°C TJ

IGBT Type :

Trench Field Stop

Case Connection :

COLLECTOR

Max Power Dissipation :

366W

Max Collector Current :

107A

Gate Charge :

325nC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

38.000013g

Gate-Emitter Thr Voltage-Max :

6.5V

Current Rating :

107A

Packaging :

Tube

Published :

1999

Current - Collector Pulsed (Icm) :

150A

Td (on/off) @ 25°C :

20ns/230ns

JESD-609 Code :

e1

Voltage - Rated DC :

600V

Pbfree Code :

yes

Gate-Emitter Voltage-Max :

30V

Turn Off Time-Nom (toff) :

400 ns

Number of Terminations :

3

Lead Free :

Lead Free

Transistor Application :

POWER CONTROL

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Radiation Hardening :

No

Collector Emitter Voltage (VCEO) :

600V

Polarity/Channel Type :

N-Channel

Factory Lead Time :

24 Weeks

Continuous Collector Current :

107A

Mounting Type :

Through Hole

Length :

21.46mm

ECCN Code :

EAR99

Height :

5.31mm

Mount :

Through Hole

JEDEC-95 Code :

TO-247AD