APT50GN120B2G
- Mfr.Part #
- APT50GN120B2G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- IGBT 1200V 134A 543W TO-247
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Single
- Max Power Dissipation :
- 543W
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Turn On Time :
- 55 ns
- Package / Case :
- TO-247-3 Variant
- Td (on/off) @ 25°C :
- 28ns/320ns
- Turn Off Time-Nom (toff) :
- 600 ns
- Current - Collector Pulsed (Icm) :
- 150A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 50A
- RoHS Status :
- RoHS Compliant
- Published :
- 1999
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Radiation Hardening :
- No
- Additional Feature :
- High Reliability
- Number of Elements :
- 1
- Switching Energy :
- 4495μJ (off)
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Test Condition :
- 800V, 50A, 2.2 Ω, 15V
- Pin Count :
- 3
- Transistor Application :
- POWER CONTROL
- Factory Lead Time :
- 24 Weeks
- IGBT Type :
- NPT, Trench Field Stop
- Max Collector Current :
- 134A
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Number of Pins :
- 3
- Current Rating :
- 134A
- Input Type :
- Standard
- Element Configuration :
- Single
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge :
- 315nC
- Voltage - Rated DC :
- 1.2kV
- Datasheets
- APT50GN120B2G
APT50GN120B2G datasheet pdf and Transistors - IGBTs - Single product details from Microsemi Corporation stock available at
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