APT50GN120B2G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Max Power Dissipation :

543W

Mount :

Through Hole

Number of Terminations :

3

Turn On Time :

55 ns

Package / Case :

TO-247-3 Variant

Td (on/off) @ 25°C :

28ns/320ns

Turn Off Time-Nom (toff) :

600 ns

Current - Collector Pulsed (Icm) :

150A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

1.2kV

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 50A

RoHS Status :

RoHS Compliant

Published :

1999

Lead Free :

Lead Free

Transistor Element Material :

SILICON

JESD-609 Code :

e1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

1.2kV

Radiation Hardening :

No

Additional Feature :

High Reliability

Number of Elements :

1

Switching Energy :

4495μJ (off)

Polarity/Channel Type :

N-Channel

Mounting Type :

Through Hole

Pbfree Code :

yes

Case Connection :

COLLECTOR

Test Condition :

800V, 50A, 2.2 Ω, 15V

Pin Count :

3

Transistor Application :

POWER CONTROL

Factory Lead Time :

24 Weeks

IGBT Type :

NPT, Trench Field Stop

Max Collector Current :

134A

Voltage - Collector Emitter Breakdown (Max) :

1200V

Number of Pins :

3

Current Rating :

134A

Input Type :

Standard

Element Configuration :

Single

Gate-Emitter Thr Voltage-Max :

6.5V

Operating Temperature :

-55°C~150°C TJ

Gate Charge :

315nC

Voltage - Rated DC :

1.2kV