APT50GN120B2G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Mounting Type :

Through Hole

Max Power Dissipation :

543W

Turn On Time :

55 ns

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Switching Energy :

4495μJ (off)

Packaging :

Tube

Package / Case :

TO-247-3 Variant

Additional Feature :

High Reliability

IGBT Type :

NPT, Trench Field Stop

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 50A

Number of Terminations :

3

Voltage - Collector Emitter Breakdown (Max) :

1200V

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

134A

Pin Count :

3

Radiation Hardening :

No

Gate-Emitter Thr Voltage-Max :

6.5V

Gate Charge :

315nC

Factory Lead Time :

24 Weeks

Published :

1999

Transistor Application :

POWER CONTROL

Current Rating :

134A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Pbfree Code :

yes

JESD-609 Code :

e1

Mount :

Through Hole

Collector Emitter Voltage (VCEO) :

1.2kV

Case Connection :

COLLECTOR

Current - Collector Pulsed (Icm) :

150A

ECCN Code :

EAR99

Input Type :

Standard

Collector Emitter Breakdown Voltage :

1.2kV

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

Td (on/off) @ 25°C :

28ns/320ns

Turn Off Time-Nom (toff) :

600 ns

Lead Free :

Lead Free

Number of Pins :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Voltage - Rated DC :

1.2kV

Test Condition :

800V, 50A, 2.2 Ω, 15V