APT50GN120B2G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Pbfree Code :

yes

Turn On Time :

55 ns

Current - Collector Pulsed (Icm) :

150A

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 50A

Number of Terminations :

3

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

1.2kV

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

1999

Td (on/off) @ 25°C :

28ns/320ns

Switching Energy :

4495μJ (off)

Max Power Dissipation :

543W

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

Input Type :

Standard

Gate-Emitter Thr Voltage-Max :

6.5V

Factory Lead Time :

24 Weeks

ECCN Code :

EAR99

Mounting Type :

Through Hole

Transistor Application :

POWER CONTROL

Test Condition :

800V, 50A, 2.2 Ω, 15V

Current Rating :

134A

Max Collector Current :

134A

IGBT Type :

NPT, Trench Field Stop

Pin Count :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Turn Off Time-Nom (toff) :

600 ns

Package / Case :

TO-247-3 Variant

RoHS Status :

RoHS Compliant

Number of Pins :

3

Voltage - Rated DC :

1.2kV

Collector Emitter Breakdown Voltage :

1.2kV

JESD-609 Code :

e1

Voltage - Collector Emitter Breakdown (Max) :

1200V

Packaging :

Tube

Radiation Hardening :

No

Additional Feature :

High Reliability

Gate Charge :

315nC

Lead Free :

Lead Free

Mount :

Through Hole