APT50GF120B2RG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Number of Pins :

3

Published :

2001

Max Collector Current :

135A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Switching Energy :

3.6mJ (on), 2.64mJ (off)

Voltage - Collector Emitter Breakdown (Max) :

1200V

Td (on/off) @ 25°C :

25ns/260ns

Voltage - Rated DC :

1.2kV

Collector Emitter Voltage (VCEO) :

1.2kV

Element Configuration :

Single

Radiation Hardening :

No

Current Rating :

156A

Gate Charge :

340nC

Case Connection :

COLLECTOR

Collector Emitter Breakdown Voltage :

1.2kV

Mount :

Through Hole

Lead Free :

Lead Free

Number of Terminations :

3

JESD-609 Code :

e1

Packaging :

Tube

Vce(on) (Max) @ Vge, Ic :

3V @ 15V, 50A

Gate-Emitter Thr Voltage-Max :

6.5V

Current - Collector Pulsed (Icm) :

150A

Factory Lead Time :

24 Weeks

Pin Count :

3

IGBT Type :

NPT

Test Condition :

800V, 50A, 1 Ω, 15V

Max Power Dissipation :

781W

Power - Max :

781W

Transistor Application :

POWER CONTROL

Package / Case :

TO-247-3 Variant

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Input Type :

Standard

Pbfree Code :

yes

Turn On Time :

106 ns

Number of Elements :

1

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Terminal Finish :

TIN SILVER COPPER

Transistor Element Material :

SILICON

Turn Off Time-Nom (toff) :

520 ns